Growth and characterization of metalorganic vapor-phase epitaxy-grown ?-(Al <sub>x</sub> Ga<sub>1?x </sub>)<sub>2</sub>O<sub>3</sub>/?-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels
نویسندگان
چکیده
Abstract We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown ? -(Al x Ga 1? ) 2 O 3 / -Ga modulation-doped heterostructures. Electron channel is realized in heterostructure by utilizing a delta-doped 1– barrier. The electron characteristics are studied using transfer length method, capacitance–voltage Hall measurements. A sheet charge density 1.06 × 10 13 cm ?2 mobility 111 V ?1 s measured at room temperature. fabricated transistor showed peak current 22 mA mm an on–off ratio 8 6 . resistance 5.3 k?/square temperature, which includes contribution from parallel
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ژورنال
عنوان ژورنال: Applied Physics Express
سال: 2021
ISSN: ['1882-0786', '1882-0778']
DOI: https://doi.org/10.35848/1882-0786/abd675